Wer wir sind

als führender Hersteller von Verbindungshalbleitermaterial in China. pam-xiamen entwickelt fortschrittliche Kristallwachstums- und Epitaxietechnologien, die von Germaniumwafern der ersten Generation, Galliumarsenid der zweiten Generation mit Substratwachstum und Epitaxie auf iii-v-Silizium-dotierten4
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Nach mehr als 20 Jahren der Akkumulation und Entwicklung, hat unser Unternehmen einen offensichtlichen Vorteil in der Technologie Innovation und Talent-Pool. In Zukunft müssen wir das Tempo der tatsächlichen Maßnahmen beschleunigen, um unseren Kunden bessere Produkte und Dienstleistungen zu bieten
Doktor Chan -CEO von Xiamen Powerway Advanced Material Co., Ltd.

unsere Produkte

blauer Laser

Gan-Vorlagen

pam-xiamen's Template-Produkte bestehen aus kristallinen Schichten aus Galliumnitrid (gan), Aluminiumnitrid (aln), Aluminiumgalliumnitrid (algan) und Indiumgalliumnitrid (ingan), die auf Saphirsubstraten abgeschieden sind, Die Templatprodukte von Siliciumcarbid oder Siliciumpam-Xiamen ermöglichen 20-50% kürzere Epitaxiezykluszeiten und höherwertige4

Gan auf Silizium

freistehendes gan-Substrat

pam-xiamen hat die Herstellungstechnologie für freistehende (Galliumnitrid) gan Substratwafer, die für uhb-led und ld ist, etabliert. gewachsen durch Hydriddampfphasenepitaxie (Hvpe) -Technologie, hat unser Gansubstrat eine geringe Defektdichte.

Gaas Kristall

GaAs (Galliumarsenid) -Wafer

pwam entwickelt und fertigt Verbundhalbleitersubstrate - Galliumarsenidkristall und -wafer. Wir haben fortschrittliche Kristallzüchtungstechnologie, vertikales Gradientenfrosten (vgf) und Gaas-Wafer-Bearbeitungstechnologie verwendet, eine Produktionslinie vom Kristallwachstum, Schneiden, Schleifen bis zur Polierbearbeitung etabliert und gebaut ein 4

sic Kristall

sic Epitaxie

Für die Entwicklung von Siliziumkarbid-Bauelementen bieten wir kundenspezifische Dünnfilm-Silizium-Epitaxie auf 6h- oder 4h-Substraten an. sic epi wafer wird hauptsächlich für Schottky-Dioden, Metall-Oxid-Halbleiter-Feldeffekttransistoren, Sperrschicht-Feldeffekttransistoren, bipolare Sperrschichttransistoren, Thyristoren, GTO und Bipolar mit isoli4

sic Kristall

sic Substrat

pam-xiamen bietet Halbleiter Siliziumkarbid Wafer, 6h sic und 4h sic in verschiedenen Qualitäten für den Forscher und Industriehersteller. wir haben sic Kristallwachstumstechnologie und sic Kristallwafer-Verarbeitungstechnologie entwickelt, etablierte eine produktionslinie zu hersteller sic substrat, die in gan epitaxie gerät, power geräte, Hochtem4

gan expitaxy

Gan-basierter LED-Epitaxialwafer

pam-xiamens Gan (Galliumnitrid) -basierter LED-Epitaxialwafer ist für Anwendungen mit ultrahoher Helligkeit für blaue und grüne Leuchtdioden (LED) und Laserdioden (LD) geeignet.

Gan-Haemt-Epitaxie

Gan-HaMt-Epitaxialwafer

Galliumnitrid (Gan) Hemts (Transistoren mit hoher Elektronenbeweglichkeit) sind die nächste Generation von HF-Leistungstransistor-Technologie. Dank der Gan-Technologie bieten Pam-Xiamen nun Algan / Gan-Hemt-Epi-Wafer auf Saphir oder Silizium und Algan / Gan auf Saphir-Template .

sic Kristall

sic Wafer zurückgewinnen

pam-xiamen ist in der Lage, die folgenden sic reclaim wafer services anzubieten.

Warum Uns Wählen

  • kostenlose und professionelle Technologieunterstützung

    Sie können unseren kostenlosen Technologie - Service von der Anfrage bis zum Service auf unserer Basis erhalten 25+ Erfahrungen in der Halbleiterlinie.

  • guter Verkaufsservice

    unser Ziel ist es, alle Ihre Anforderungen zu erfüllen, egal wie klein Bestellungen sind und wie schwierig die Fragen sind Sie können sein, um für jeden Kunden ein nachhaltiges und profitables Wachstum durch qualifizierte Produkte und zufriedenstellenden Service zu gewährleisten.

  • 25+ Jahre Erfahrung

    mit mehr als 25 + Jahre Erfahrungen Im Bereich der Verbindungshalbleitermaterialien und Exportgeschäfte kann unser Team Ihnen versichern, dass wir Ihre Anforderungen verstehen und professionell mit Ihrem Projekt umgehen können.

  • zuverlässige Qualität

    Qualität ist unsere erste Priorität. Pam-Xiamen wurde iso9001: 2008 , besitzt und teilt vier moderne facories, die eine ziemlich große Auswahl von qualifizierten Produkten zur Verfügung stellen können, um verschiedene Bedürfnisse unserer Kunden zu erfüllen, und jede Bestellung muss durch unser stren4

"Wir haben die Powerway Epi Wafer für einige unserer Arbeiten verwendet. Wir sind sehr beeindruckt von der Qualität des Epi"
James S. Speck, Materialabteilung Universität von Kalifornien
2018-01-25
"liebe pam-xiamen-teams, danke für deinen berufsstand, das problem ist gelöst, wir sind so froh, dein partner zu sein"
Raman k. Chauhan, Seren Photonik
2018-01-25
"danke für die schnelle antwort meiner fragen und konkurrenzfähiger preis, es ist sehr nützlich für uns, wir werden bald wieder bestellen"
markus sieger, universität ulm
2018-01-25
"Die Siliziumkarbid-Wafer sind heute angekommen, und wir sind sehr zufrieden mit ihnen! Daumen hoch zu Ihrer Produktionsmannschaft!"
Dennis, Universität von Exeter
2018-01-25

Die berühmtesten Universitäten und Firmen der Welt vertrauen uns

neuesten Nachrichten

Absorption and dispersion in undoped epitaxial GaSb layer

2019-07-16

In this paper, we present the results of a theoretical and experimental investigation into the refractive index and absorption, at room temperature, of a 4 μm-thick undoped epitaxial layer of GaSb deposited on a GaAs substrate. A theoretical formula for optical transmission through an etalon was derived, taking into account the finite coherence length of the light. This formula was used to analyse the measured transmission spectra. The refractive index was determined in a wide spectral range, between 0.105 eV and 0.715 eV. The absorption was determined for photon energies between 0.28 eV and 0.95 eV. An Urbach tail was observed in the absorption spectrum, as well as a constant increase in absorption in the spectral region above the band gap. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Study on Cd vacancy in CdZnTe Crystal by Positron Annihilation Technology

2019-07-08

Cd vacancies in cadmium zinc telluride(CdZnTe) crystals have an important effect on the crystal properties. In this paper, position distribution and concentration change of Cd vacancy in CdZnTe crystal grown by the temperature gradient solution growth (TGSG) were investigated by positron annihilation technology (PAT), which was based on the potential energy distribution and probability density of the positron in the crystal. The results showed that, the density of Cd vacancy increased obviously from the first-to-freeze to stable growth of the ingots, while decreased along the radial direction of the ingots. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges

2019-07-03

After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

2019-06-17

The Co doped amorphous carbon films (a-C:Co), deposited by pulsed laser deposition, show p-n and ohmic contact characteristics with n-type low resistivity GaAs (L-GaAs) and semi-insulated high-resistivity GaAs (S-GaAs). The photosensitivity enhances for a-C:Co/L-GaAs, while inverse decreases for a-C:Co/S-GaAs heterojunction, respectively. Furthermore, the enhanced photosensitivity for the a-C:Co/L-GaAs/Ag heterojunction also shows deposition temperature dependence behavior, and the optimum deposition temperature is around 500 °C. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Realization and characterization of thin single crystal Ge films on sapphire

2019-06-13

We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (<2 µm) Ge layer is needed for device operation. The GeOS templates have been realized using the Smart CutTM technique. 100 mm diameter GeOS templates have been manufactured and characterized to compare the Ge thin film properties with bulk Ge. Surface defect inspection, SEM, AFM, defect etching, XRD and Raman spectroscopy were all performed. The results obtained for each characterization technique used have highlighted that the material properties of the transferred thin Ge film were very close to the ones of a bulk Ge reference. An epitaxial AlGaInP/GaInP/AlGaInP double heterostructure was grown atop the GeOS template to demonstrate the template's stability under the conditions encountered in typical device realization. The photoluminescent behavior of thi...

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Optical nonlinearity characteristics of crystalline InSb semiconductor thin films

2019-06-04

The intensity-dependent nonlinear absorption and refraction characteristics of crystalline InSb thin films are investigated by z-scan method at 405 nm laser wavelength. Results show that the nonlinear absorption coefficient of crystalline InSb thin films is in the order of ~ + 10−2 m W−1, and the nonlinear refractive index is in the order of ~ + 10−9 m2 W−1. Variable-temperature ellipsometric spectroscopy measurements and electronic process analyses as well as theoretical calculations are employed to discuss the internal mechanisms responsible for the giant optical nonlinearity. Analysis results indicate that the nonlinear absorption mainly stems from the laser-induced free-carrier absorption effect, whereas the nonlinear refraction is mainly from thermal effect due to band gap shrinking and carrier effect due to the transition process of electrons, respectively. These characteristics may be responsible for the super-resolution effect in nano-optical information storage. Source:IOPscie...

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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

2019-05-27

This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@p...

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Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

2019-05-23

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic o...

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Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

2019-05-13

To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobility lifetime products (μτ)e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with (μτ)e = 2.3 × 10−3 cm2/V and μe = 1000 cm2/(V dot m s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 ke...

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Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

2019-05-09

We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on GaN,  GaN, and GaN substrates. A repeating pattern of  and  facets appeared on  GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on  GaN. The emission properties characterized by cathodoluminescence were different for  and  facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the a-axis were observed by AFM. In particular on  GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the m-plane and also depended on the polarity. Source:IOPscience F...

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